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Home > products > Micro Ohm Tester > Semiconductor Parameter Analyzer Dual CPU Max Voltage 40V LCR 0.56ms 10 Bins

Semiconductor Parameter Analyzer Dual CPU Max Voltage 40V LCR 0.56ms 10 Bins

Category:
Micro Ohm Tester
Specifications
Application:
Semiconductor
Data Analysis:
Real-time Analysis
Data Storage:
Internal Memory
Data Transfer:
USB/Ethernet
Dimensions:
Compact
Display:
LCD Display
Interface:
USB/Ethernet
Measurement Range:
High Voltage
Measurement Speed:
High Speed
Measurement Type:
CV
Power Supply:
AC/DC
Product Name:
CV Analyzer For Semiconductor
Safety:
CE/UL Certified
Software:
Windows/Mac OS
Weight:
Lightweight
Highlight:

semiconductor parameter analyzer

,

lcr analyzer

,

semiconductor analyser

Introduction

TH511 Semiconductor CV Analyzer: Dual CPU, Max.Voltage ±40V, LCR 0.56ms, 10 Bins

  1. Application in Testing and Characterization: The DC Bias Current Source finds extensive use in testing and characterization of electronic components, such as transistors, diodes, integrated circuits (ICs), and sensors. It enables the assessment of device behavior under specific biasing conditions, facilitating the measurement of parameters like gain, linearity, leakage current, and threshold voltage. Additionally, it is employed in the calibration of measurement equipment, ensuring accurate and traceable results.

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Features

10.1-inch capacitive touch screen, resolution 1280*800, Linux system

Dual CPU architecture, the fastest test speed of LCR function is 0.56ms

Three test methods: spot test, list scan, and graphic scan (option)

Four parasitic parameters (Ciss, Coss, Crss, Rg) are measured and displayed on the same screen

CV curve scan, Ciss-Rg curve scan

Integrated design: LCR + VGS low voltage source + VDS high voltage source + channel switching + PC

Standard 2-channel test, which can test two devices or dual-chip devices at the same time, the channel can be expanded to 6, channel parameters are stored separately

Fast charging, shortens capacitor charging time and enables fast testing

Automatic delay setting

High Bias: VGS: 0 - ±40V, VDS: 0 - 200V/1500V/3000V

10 bin sorting

Applications

Semiconductor components/Power components

Parasitic capacitance test and C-V characteristic analysis of diodes, triodes, MOSFETs, IGBTs, thyristors, integrated circuits, optoelectronic chips, etc.

Semiconductor material

Wafer, C-V characteristic analysis

Liquid crystal material

Elastic constant analysis

Capacitive element

Capacitor C-V characteristic test and analysis, capacitive sensor test and analysis

 

 

Specifications

Model TH511 TH512 TH513
Channel 2 (4/6 Ch Optional) 2
Display Display 10.1-inch capacitive touchscreen
Ratio 0.672916667
Resolution 1280*RGB*800
Test Parameter Ciss, Coss, Crss, Rg. Four parameter selectable arbitrarily
Test Frequency Range 1kHz-2MHz
Accuracy 0.0001
Resolution 10mHz1.00000kHz-9.99999kHz
100mHz10.0000kHz-99.9999kHz
1Hz100.000kHz-999.999kHz
10Hz1.00000MHz-2.00000MHz
Test Level Voltage Range 5mVrms-2Vrms
Accuracy ± (10%*Setting Value+2mV)
Resolution 1mVrms5mVrms-1Vrms
10mVrms1Vrms-2Vrms
Vgs Range 0 - ±40V
Accuracy 1%* Setting Voltage+8mV
Resolution 1mV0V - ±10V
10mV10V - ±40V
Vds Range 0 - 200V 0 - 1500V 0 - 3000V
Accuracy 1%* Setting Voltage+100mV
Output Impedance 100, ±2%@1kHz
Computation Absolute deviation from nominal value, percent deviation from nominal value %
Calibration Function OPEN, SHORT, LOAD
Measure Average 1-255 times
AD Conversion Time (ms/time) Fast+: 0.56ms (>5kHz), Fast: 3.3ms, Middle: 90ms, Slow: 220ms.
Basic Accuracy 0.001
 
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